Electronic States And Optical Transitions In Solids Pdf


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Modern semiconductor devices have revolutionized wide ranging technologies such as electronics, lighting, solar energy, and communication [1]. The semiconductor industry employs Si to fabricate electronic circuits, and GaAs, GaN, and other III—V materials for optoelectronics [2] , with typical substrates consisting of wafers manufactured at high temperature.

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Electronic band structure

Skip to search form Skip to main content You are currently offline. Some features of the site may not work correctly. DOI: Bassani and G. Parravicini and R.

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Thank you for visiting nature. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser or turn off compatibility mode in Internet Explorer. In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript. Solid-state electronic spins are extensively studied in quantum information science, as their large magnetic moments offer fast operations for computing 1 and communication 2 , 3 , 4 , and high sensitivity for sensing 5. However, electronic spins are more sensitive to magnetic noise, but engineering of their spectroscopic properties, for example, using clock transitions and isotopic engineering, can yield remarkable spin coherence times, as for electronic spins in GaAs 6 , donors in silicon 7 , 8 , 9 , 10 , 11 and vacancy centres in diamond 12 , This effect is due to the highly anisotropic hyperfine interaction, which makes each electronic—nuclear state an entangled Bell state.

Recent results on the optical properties of monolayer and few layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits of our understanding in this emerging field of research. We first introduce the representative band structure of these systems and their interband optical transitions. The effect of an external magnetic field is then considered to discuss Zeeman spectroscopy and optical pumping experiments, both revealing phenomena related to the valley degree of freedom. Finally, we discuss the observation of single photon emitters in different types of layered materials, including wide band gap hexagonal boron nitride. While going through these topics, we try to focus on open questions and on experimental observations, which do not yet have a clear explanation. Atomically thin layers of semiconducting transition metal dichalcogenides S-TMDs represent a new class of materials, which are of vivid interest [ 1 ], [ 2 ], [ 3 ], [ 4 ], [ 5 ], [ 6 ], primary in the area of semiconductor physics and nanoscience as well as opto-electronic applications.


ELECTRONIC STATES. AND. OPTICAL TRANSITIONS. IN SOLIDS by. F. BASSANI. Professor of Solid State Physics, University of Rome and. G. PASTORI​.


Electronic States and Optical Transitions in Solids

Dresselhaus 1. Bekefi and A. The central question is the relationship between experimental observations and the electronic energy levels energy bands of the solid. In the infrared photon energy region, information on the phonon branches is obtained.

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We develop an empirical tight binding approach for the modeling of the electronic states and optical properties of Si nanocrystals embedded in a SiO 2 matrix. To simulate the wide band gap SiO 2 matrix we use the virtual crystal approximation. This model of the SiO 2 matrix allows us to reproduce the band structure of real Si nanocrystals embedded in a SiO 2 matrix. In this model, we compute the absorption spectra of the system. The calculations are in an excellent agreement with experimental data.

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Manela T.
16.05.2021 at 03:01 - Reply

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In solid-state physics , the electronic band structure or simply band structure of a solid describes the range of energy levels that electrons may have within it, as well as the ranges of energy that they may not have called band gaps or forbidden bands.

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